Modeling miniband for realistic silicon nanocrystal array

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Modeling miniband for realistic silicon nanocrystal array

Within the envelop-function framework, we developed the finite element method to calculate theminibands in the realist Silicon nanocrystal array. This method clearly reveals the miniband formation and accurately calculates the E–K dispersion relationship. In the simple 1D array, the deduced miniband structure matches well with the analytic Kronig–Penney method. More importantly, it can better s...

متن کامل

Silicon optical nanocrystal memory

We describe the operation of a silicon optical nanocrystal memory device. The programmed logic state of the device is read optically by the detection of high or low photoluminescence intensity. The suppression of excitonic photoluminescence is attributed to the onset of fast nonradiative Auger recombination in the presence of an excess charge carrier. The device can be programmed and erased ele...

متن کامل

A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement

Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devic...

متن کامل

Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances

We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of ...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Mathematical and Computer Modelling

سال: 2013

ISSN: 0895-7177

DOI: 10.1016/j.mcm.2012.11.012